Non-volatile gated variable resistor based on doped La2CuO4+delta and SrTiO3 heterostructures

摘要

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La2CuO4+delta and SrTiO3 layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form Delta G/G = CI(A)t(B). This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691599]